| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.043 Ω |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 235pF @15V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.56 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control. This product is general usage and suitable for many different applications.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
● ±20V Continuous gate source voltage (VGSS)
● 42°C/W Thermal resistance, junction to ambient
● 12°C/W Thermal resistance, junction to case
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