| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 220 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 350 mW |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 350 mW |
| Threshold Voltage | 850 mV |
| Input Capacitance | 9.50 pF |
| Gate Charge | 700 pC |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | 8.00 V |
| Continuous Drain Current (Ids) | 220 mA |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 9.5pF @10V(Vds) |
| Input Power (Max) | 350 mW |
| Fall Time | 3.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDV301N from Fairchild is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
● Drain to source voltage (Vds) of 25V
● Gate to source voltage of 8V
● Continuous drain current (Id) of 220mA
● Power dissipation (Pd) of 350mW
● Low on state resistance of 3.1ohm at Vgs 4.5V
● Operating temperature range -55°C to 150°C
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