FDV301N-F169 Datasheet PDF - ON Semiconductor

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

●Features

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● • 25 V, 0.22 A continuous, 0.5 A Peak.

● RDS(ON) = 5 Ω @ VGS= 2.7 V

● RDS(ON) = 4 Ω @ VGS= 4.5 V

●• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V

●• Gate-Source Zener for ESD ruggedness.

● >6kV Human Body Model.

●• Replace multiple NPN digital transistors with one DMOS FET.