| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 680 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 350 mW |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.33 Ω |
| Polarity | N-Channel |
| Power Dissipation | 350 mW |
| Threshold Voltage | 800 mV |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | 8.00 V |
| Continuous Drain Current (Ids) | 680 mA |
| Rise Time | 8.5 ns |
| Input Capacitance (Ciss) | 50pF @10V(Vds) |
| Input Power (Max) | 350 mW |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDV303N from Fairchild is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V and designed for application in battery circuits using either one lithium or three cadmium or NHM cells, inverters, high efficiency miniature discrete DC/DC conversion in electronic devices like cellular phones and pagers.
● Drain to source voltage (Vds) of 25V
● Gate to source voltage of 8V
● Continuous drain current (Id) of 680mA
● Power dissipation (Pd) of 350mW
● Low on state resistance of 330mohm at Vgs 4.5V
● Operating temperature range -55°C to 150°C
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