| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-23-3 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
This P-Channel enhancement mode field effect transistors is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
●Features
●---
● |
● -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V.
● Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
● Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
● Compact industry standard SOT-23 surface mount package.
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