TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SC-89-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 8 Ω |
Polarity | P-Channel |
Power Dissipation | 625 mW |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Gate to Source) | ±8.00 V |
Continuous Drain Current (Ids) | 150 mA |
Rise Time | 13 ns |
Input Capacitance (Ciss) | 100pF @10V(Vds) |
Input Power (Max) | 446 mW |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 1.6 mm |
Size-Width | 0.88 mm |
Size-Height | 0.78 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDY101PZ is a single P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process to optimize the RDS (ON) at VGS = - 2.5V. It is suitable for Li-ion battery pack application.
● ESD protection diode
Fairchild
3 Pages / 0.08 MByte
Fairchild
8 Pages / 0.23 MByte
Fairchild
6 Pages / 1.89 MByte
Fairchild
6 Pages / 0.12 MByte
Fairchild
Trans MOSFET P-CH 20V 0.15A 3Pin SC-89 T/R
ON Semiconductor
MOSFET P-CH 20V 0.15A SC-89
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