| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Positions | 3 Position |
| Forward Current | 30 A |
| Max Forward Surge Current (Ifsm) | 150 A |
| Maximum Forward Voltage (Max) | 620 mV |
| Forward Current (Max) | 30 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature | 175℃ (Max) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 6.2 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.
●Key Features
● ST advanced rectifier process
● Stable leakage current over reverse voltage
● Reduced leakage current
● Low forward voltage drop
● High frequency operation
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