TYPE | DESCRIPTION |
---|
Number of Pins | 12 Pin |
Case/Package | AG-PRIME3-1 |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Capacitance (Cies) | 82nF @25V |
Input Power (Max) | 1400000 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● Extended Operation Temperature T(tvj op)
● High DC Stability
● High Short Circuit Capability, Self Limiting Short Circuit Current
● Unbeatable Robustness
● Vce(sat) with positive Temperature Coefficient
● Low Vce(sat)
● 4kV AC 1min Insulation
● Package with CTI > 400
● High Creepage and Clearance Distances
● High Power and Thermal Cycling Capability
● Substrate for Low Thermal Resistance
● UL recognized
●Benefits:
● High Power Density
● Standardized housing
Infineon
10 Pages / 0.62 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte
Infineon
Trans IGBT Module N-CH 1.2kV 1.4kA 10Pin PRIME3
Infineon
1200V PrimePACK™3 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material.
Infineon
Trans IGBT Module N-CH 1200V 1.4kA 7650000mW 12Pin PRIME3-1 Tray
Infineon
Trans IGBT Module N-CH 1200V 1400A 12Pin PRIME3-1
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.