FF1800R12IE5PBPSA1 Datasheet PDF - Infineon

Manufacturer:	Infineon
Description:	Trench Field Stop IGBT Module Transistor
Documentation:	FF1800R12IE5PBPSA1 Datasheet (10 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

FF1800R12IE5PBPSA1 Specifications

TYPE	DESCRIPTION
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	98.5nF @25V
Input Power (Max)	20 mW

Infineon

10 Pages / 0.79 MByte

Infineon

4 Pages / 0.31 MByte

Infineon

1200V PrimePACK™3+ dual IGBT module with IGBT5 and .XT interconnection technology, Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC.

Infineon

1200V PrimePACK™3+ dual IGBT module with IGBT5 and .XT interconnection technology, Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC.

Infineon

Trench Field Stop IGBT Module Transistor

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