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FF200R12KT4HOSA1
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FF200R12KT4HOSA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:62MM-1
Description:IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
Documentation:FF200R12KT4HOSA1 Datasheet (8 Pages)FF200R12KT4HOSA1 User Reference Manual Guide (36 Pages)FF200R12KT4HOSA1 Application Note (40 Pages)
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FF200R12KT4HOSA1 Datasheet PDF (8 Pages)
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FF200R12KT4HOSA1 Specifications

TYPEDESCRIPTION
Number of Pins7 Pin
Case/Package62MM-1
Number of Positions7 Position
PolarityNPN
Power Dissipation1.1 kW
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)14nF @25V
Input Power (Max)1100 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)1100000 mW
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FF200R12KT4HOSA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTray
Size-Length106.4 mm
Size-Width61.4 mm
Size-Height30.9 mm
Operating Temperature-40℃ ~ 150℃ (TJ)
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FF200R12KT4HOSA1 Documents

FF200R12KT4HOSA1 Datasheet
Infineon
8 Pages / 0.45 MByte
FF200R12KT4HOSA1 User Reference Manual Guide
Infineon
36 Pages / 3.45 MByte
FF200R12KT4HOSA1 Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
FF200R12KT4HOSA1 Application Note
Infineon
40 Pages / 6.73 MByte
FF200R12KT4HOSA1 Notice File
Infineon
1 Pages / 0.13 MByte

FF200R12KT4 Documents

FF200R12KT4 Datasheet PDF
Infineon
INFINEON FF200R12KT4 IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
FF200R12KT4HOSA1 Datasheet PDF
Infineon
IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
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