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FF200R17KE3HOSA1
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FF200R17KE3HOSA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Case Package:62MM-1
Description:Trans IGBT Module N-CH 1700V 390A 1250000mW 7Pin 62MM-1 Tray
Documentation:FF200R17KE3HOSA1 Datasheet (1 Pages)FF200R17KE3HOSA1 User Reference Manual Guide (3 Pages)
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FF200R17KE3HOSA1 Datasheet PDF (1 Pages)
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FF200R17KE3HOSA1 Specifications

TYPEDESCRIPTION
Number of Pins7 Pin
Case/Package62MM-1
Power Dissipation1.25 kW
Breakdown Voltage (Collector to Emitter)1700 V
Input Capacitance (Cies)18nF @25V
Input Power (Max)1250 W
Operating Temperature (Max)125 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)1250000 mW
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FF200R17KE3HOSA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTray
Operating Temperature-40℃ ~ 125℃ (TJ)
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FF200R17KE3HOSA1 Documents

FF200R17KE3HOSA1 Datasheet
Infineon
1 Pages / 0.06 MByte
FF200R17KE3HOSA1 User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
FF200R17KE3HOSA1 Other Datasheet PDF
Infineon
2 Pages / 0.12 MByte

FF200R17KE3 Documents

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Trans IGBT Module N-CH 1700V 390A 1250000mW 7Pin 62MM Tray
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62mm C-series module with trench/fieldstop IGBT and EmCon diode
FF200R17KE3HOSA1 Datasheet PDF
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Trans IGBT Module N-CH 1700V 390A 1250000mW 7Pin 62MM-1 Tray
FF200R17KE3S4HOSA1 Datasheet PDF
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FF200R17KE3S4HOSA1
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