| TYPE | DESCRIPTION |
|---|
| Case/Package | AG-62MM-1 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Summary of Features:
● Superior solution for frequency controlled inverter drives
● UL/CSA Certification with UL1557 E83336
● Operating temperature up to 150 °C
● Optimized switching characteristic like softness and reduced switching losses
● Existing packages with higher current capability
● RoHS compliant
●Benefits:
● Flexibility
● Optimal electrical performance
● Highest reliability
Infineon
8 Pages / 0.44 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
40 Pages / 6.73 MByte
Infineon
INFINEON FF300R12KE4 IGBT Array & Module Transistor, Dual NPN, 460A, 1.75V, 1.6kW, 1.2kV, Module
Infineon
IGBT Array & Module Transistor, Dual NPN, 460A, 1.75V, 1.6kW, 1.2kV, Module
Infineon
Our well-known 62mm C-series 1200V 3-level IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF300R12KE4).
Infineon
Our well-known 62mm C-series 1200V dual IGBT modules with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals are the right choice for your design.
Infineon
Our well-known 62mm C-series 1200V 3-level IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF300R12KE4).
Infineon
Trans IGBT Module N-CH 1200V 300A 7Pin Tray
Infineon
Our well-known 62mm C-series 1200V dual IGBT modules with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals are the right choice for your design.
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
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