| TYPE | DESCRIPTION |
|---|
| Number of Pins | 7 Pin |
| Case/Package | 62MM-1 |
| Number of Positions | 7 Position |
| Polarity | NPN |
| Power Dissipation | 1.25 kW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Input Capacitance (Cies) | 26nF @25V |
| Input Power (Max) | 1250 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● Increased blocking voltage capability to 650V
● Extended Operation Temperature T vj op
● High Short Circuit Capability, Self Limiting Short Circuit Current
● 2.5 kV AC 1min Insulation
● Package with CTI > 400
● High Creepage and Clearance Distances
● Isolated Base Plate
● Standard Housing
●Benefits:
● Flexibility
● Optimal electrical performance
● Highest reliability
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INFINEON FF400R07KE4 IGBT Array & Module Transistor, Dual NPN, 485A, 1.55V, 1.25kW, 650V, Module
Infineon
INFINEON FF400R07KE4HOSA1 IGBT Array & Module Transistor, Dual NPN, 485A, 1.55V, 1.25kW, 650V, Module
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