| TYPE | DESCRIPTION |
|---|
| Case/Package | AG-62MM-1 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Summary of Features:
● T vj op = 150°C
● 4 kV AC 1min Insulation
● Package with CTI > 400
● High Creepage and Clearance Distances
● RoHS compliant
●Benefits:
● Flexibility
● Optimal electrical performance
● Highest reliability
Infineon
9 Pages / 0.58 MByte
Infineon
36 Pages / 3.45 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
33 Pages / 2.24 MByte
Infineon
Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray
Infineon
IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
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