| TYPE | DESCRIPTION |
|---|
| Number of Pins | 7 Pin |
| Case/Package | AG-62MM-1 |
| Power Dissipation | 2.4 kW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 28nF @25V |
| Input Power (Max) | 2400 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2400000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● T vj op = 150°C
● 4 kV AC 1min Insulation
● Package with CTI > 400
● High Creepage and Clearance Distances
● RoHS compliant
●Benefits:
● Flexibility
● Optimal electrical performance
● Highest reliability
Infineon
1 Pages / 0.06 MByte
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36 Pages / 3.45 MByte
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73 Pages / 2.93 MByte
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33 Pages / 2.24 MByte
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Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray
Infineon
IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
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