| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 11 Pin |
| Case/Package | ECONOD-3 |
| Power Dissipation | 2100000 mW |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 125℃ |
● Easy separation of DC and AC
● Optimized Thermal Resistance Case to Heat Sink
● Highest Power Density for compact Inverter Designs
Infineon
8 Pages / 0.47 MByte
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8 Pages / 0.29 MByte
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Trans IGBT Module N-CH 1200V 580A 2400000mW 7Pin 62MM Tray
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Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray
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Trans IGBT Module N-CH 1.2kV 675A 11Pin
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INFINEON FF450R12KT4HOSA1 IGBT Array & Module Transistor, Dual NPN, 580A, 1.75V, 2.4kW, 1.2kV, Module
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EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).
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Trans IGBT Module N-CH 1.2kV 675A 11Pin
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IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module
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Trans IGBT Module N-CH 1200V 600A 2100000mW 11Pin ECONOD-3 Tray
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Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-3 Tray
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
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