TYPE | DESCRIPTION |
---|
Number of Pins | 11 Pin |
Case/Package | ECONOD-3 |
Power Dissipation | 2.25 kW |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Input Capacitance (Cies) | 28nF @25V |
Input Power (Max) | 2250 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 2250000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Size-Length | 152.1 mm |
Size-Width | 62 mm |
Size-Height | 20.8 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
Infineon
9 Pages / 0.58 MByte
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3 Pages / 0.36 MByte
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7 Pages / 0.57 MByte
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33 Pages / 2.24 MByte
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1 Pages / 0.13 MByte
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Trans IGBT Module N-CH 1.2kV 675A 11Pin
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EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).
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Trans IGBT Module N-CH 1.2kV 675A 11Pin
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Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-3 Tray
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Trans IGBT Module N-CH 1200V 450A 11Pin EconoDUAL
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Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-4 Tray
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EconoDUAL™ 3 1200V dual IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC and pre-applied Thermal Interface Material.
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EconoDUAL™ 3 1200V dual IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC and pre-applied Thermal Interface Material.
Infineon
EconoDUAL™ 3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).
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