| TYPE | DESCRIPTION |
|---|
| Number of Pins | 11 Pin |
| Case/Package | AG-ECONOD-3 |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 28nF @25V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 150℃ |
Summary of Features:
● Low V CEsat
● T vj op = 150°C
● Standard Housing
●Benefits:
● Compact Modules
● Easy and most reliable assembly
● No Plugs and Cables required
● Ideal for Low Inductive System Designs
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36 Pages / 3.45 MByte
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73 Pages / 2.93 MByte
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33 Pages / 2.24 MByte
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Trans IGBT Module N-CH 1.2kV 675A 11Pin
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EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).
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Trans IGBT Module N-CH 1.2kV 675A 11Pin
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Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-3 Tray
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Trans IGBT Module N-CH 1200V 450A 11Pin EconoDUAL
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Trans IGBT Module N-CH 1200V 675A 2250000mW 11Pin ECONOD-4 Tray
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EconoDUAL™ 3 1200V dual IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC and pre-applied Thermal Interface Material.
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EconoDUAL™ 3 1200V dual IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC and pre-applied Thermal Interface Material.
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EconoDUAL™ 3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Infineon
EconoDUAL™ 3 1200V Common Emitter IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled HE Diode, NTC, and PressFIT contact technology. For 3-level NPC2 topologies. Suited for 1000V and 1500V solar inverters in combination with a standard half-bridge EconoDUAL™ 3 IGBT module (e.g. FF450R12ME4_B11).
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