| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-220-2 |
| Forward Voltage | 1.75 V |
| Power Dissipation | 65000 mW |
| Reverse recovery time | 0 ns |
| Forward Current | 8800 mA |
| Forward Current (Max) | 8.8 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 65000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
●Features
●---
● |
● Max Junction Temperature 175 °C
● High Surge Current Capacity
● Positive Temperature Coefficient
● No Reverse Recovery / No Forward Recovery
ON Semiconductor
6 Pages / 0.28 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
21 Pages / 0.73 MByte
ON Semiconductor
Diode Schottky SiC 650V 8.8A 2Pin(2+Tab) TO-220 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
