| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 186 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 330 ns |
| Input Power (Max) | 186 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 186000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FGA15N120ANTDTU_F109 is a 1200V NPT Trench IGBT. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.
● Low saturation voltage
● Low switching loss
● Extremely enhanced avalanche capability
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