| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 348 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 348 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 348000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FGA20S120M is a shorted-anode Field Stop IGBT with high input impedance and high speed switching. It offers superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
● ±25V Gate to emitter voltage
Fairchild
9 Pages / 0.78 MByte
Fairchild
17 Pages / 0.39 MByte
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4 Pages / 0.62 MByte
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6 Pages / 0.51 MByte
Fairchild
Trans IGBT Chip N-CH 1200V 40A 348000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 1200V 40A 348000mW 3Pin(3+Tab) TO-3PN Tube
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