TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-3-3 |
Power Dissipation | 250000 mW |
Breakdown Voltage (Collector to Emitter) | 1250 V |
Input Power (Max) | 250 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 250000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail |
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
●Features
●---
● |
● High speed switching
● Low saturation voltage: VCE(sat) =2.0V @ IC = 20A
● High input impedance
● RoHS compliant
ON Semiconductor
10 Pages / 1.21 MByte
ON Semiconductor
2 Pages / 0.05 MByte
Fairchild
Trans IGBT Chip N-CH 1250V 40A 250000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 1250V 40A 250000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 1.25kV 40A 3Pin TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 1250V 40A 250000mW 3Pin(3+Tab) TO-3PN Rail
Fairchild
1250V, 20A, Shorted-anode IGBT, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.