| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 272000 mW |
| Input Capacitance | 1686 pF |
| Breakdown Voltage (Collector to Emitter) | 1400 V |
| Thermal Resistance | 40 ℃/W |
| Input Power (Max) | 272 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 272000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
●Features
●---
● |
● High speed switching
● Low saturation voltage: VCE(sat) =1.9V @ IC = 20A
● High input impedance
● RoHS compliant
ON Semiconductor
8 Pages / 0.85 MByte
ON Semiconductor
2 Pages / 0.05 MByte
Fairchild
Trans IGBT Chip N-CH 1.4kV 40A 3Pin(3+Tab) TO-3PN Tube
ON Semiconductor
Trans IGBT Chip N-CH 1400V 40A 272000mW 3Pin(3+Tab) TO-3PN Tube
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