| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 250000 mW |
| Breakdown Voltage (Collector to Emitter) | 1250 V |
| Input Power (Max) | 250 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
●Features
●---
● |
● High speed switching
● Low saturation voltage: VCE(sat) =1.8V @ IC = 25A
● High input impedance
● RoHS compliant
ON Semiconductor
7 Pages / 0.61 MByte
ON Semiconductor
66 Pages / 0.58 MByte
ON Semiconductor
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Fairchild
Trans IGBT Chip N-CH 1.25kV 50A 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 1250V 50A 250000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 1.25kV 50A 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 1250V 50A 250000mW 3Pin(3+Tab) TO-3PN Rail
Fairchild
1250V, 25A, Shorted-anode IGBT, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL
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