| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 348000 mW |
| Breakdown Voltage (Collector to Emitter) | 1300 V |
| Input Power (Max) | 348 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 348 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
●Features
●---
● |
● High speed switching
● Low saturation voltage: VCE(sat) =1.75V @ IC = 30A
● High input impedance
● RoHS compliant
ON Semiconductor
9 Pages / 0.35 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1300V 60A 348000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 1300V 60A 348000mW 3Pin(3+Tab) TO-3PN Rail
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