| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 300000 mW |
| Breakdown Voltage (Collector to Emitter) | 1100 V |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. This device is tailored to induction cooker and microwave oven.
●Features
●---
● |
● Intrinsic anti-parallel diode for soft-switching applications
● High switching frequency range 10 kHz to 50kHz
● High temperature stable behavior (Tjmax = 175oC)
● Low saturation voltage drop : VCE(sat) = 2.06 V @ IC = 50 A
● Robust pot detection noise immunity
● RoHS compliant (Pb-free lead plating)
ON Semiconductor
8 Pages / 0.21 MByte
ON Semiconductor
4 Pages / 0.62 MByte
Fairchild
Trans IGBT Chip N-CH 1100V 50A 300000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 1100V 50A 300000mW 3Pin(3+Tab) TO-3PN Tube
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