TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-3-3 |
Power Dissipation | 298000 mW |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 47 ns |
Input Power (Max) | 298 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 298000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.8 mm |
Size-Width | 5 mm |
Size-Height | 20.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
●Features
●---
● |
● High Current Capability
● Low saturation voltage: VCE(sat) =1.9V @ IC = 60A
● High Input Impedance
● Fast switching: EOFF =14uJ/A
● RoHS compliant
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
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Fairchild
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-3PN Rail
Fairchild
600V, 60A Field Stop IGBT
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-3PN
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