| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 600 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 47 ns |
| Input Power (Max) | 600 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.8 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2 generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
●Features
●---
● |
● Maximum junction temperature : TJ =175 °C
● Positive temperature co-efficient for easy parallel operating
● High current capability
● Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A
● Fast switching: EOFF =7.5uJ/A
● Tightened parameter distribution
● RoHS compliant
ON Semiconductor
9 Pages / 0.33 MByte
ON Semiconductor
13 Pages / 0.57 MByte
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2 Pages / 0.05 MByte
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21 Pages / 0.73 MByte
Fairchild
Trans IGBT Chip N-CH 650V 120A 600000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 600000mW 3Pin(3+Tab) TO-3PN Tube
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