| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 238000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 101 ns |
| Input Power (Max) | 238 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 238000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Height | 18.9 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IGBT Trench Field Stop 650V 80A 238W Through Hole TO-3PN
Fairchild
9 Pages / 2.44 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 80A 238000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 650V 80A 238000mW 3Pin(3+Tab) TO-3PN Rail
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