| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 238000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 101 ns |
| Input Power (Max) | 238 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 238000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3 generation IGBTs offer the optimum performance for welder application where low conduction and switching losses are essential.
●Features
●---
● |
● Maximum Junction Temperature : TJ =175°C
● Positive Temperaure Co-efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) =1.8 V(Typ.) @ IC = 40 A
● 100% of the Parts Tested for ILM(1)
● High Input Impedance
● Fast Switching
● Tighten Parameter Distribution
● RoHS Compliant
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 80A 238000mW 3Pin(3+Tab) TO-3PN Tube
Fairchild
Trans IGBT Chip N-CH 650V 80A 238000mW 3Pin(3+Tab) TO-3PN Rail
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