| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Dissipation | 115000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 36 ns |
| Input Power (Max) | 115 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 115 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.7 mm |
| Size-Width | 3.2 mm |
| Size-Height | 26.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Fairchild
10 Pages / 0.25 MByte
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11 Pages / 0.49 MByte
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Trans IGBT Chip N-CH 600V 40A 100000mW 3Pin(3+Tab) TO-3pF Rail
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Trans IGBT Chip N-CH 600V 40A 100000mW 3Pin(3+Tab) TO-3pF Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 115000mW 3Pin(3+Tab) TO-3pF Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 100000mW 3Pin(3+Tab) TO-3pF Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 100000mW 3Pin(3+Tab) TO-3pF Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 3Pin TO-3pF Rail
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