| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-2 |
| Power Dissipation | 349000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 349 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 349 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2 generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.
●Features
●---
● |
● Maximum junction temperature : TJ =175 °C
● Positive temperaure co-efficient for easy parallel operating
● High current capability
● Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A
● Fast switching: EOFF =6.5uJ/A
● Tightened parameter distribution
● RoHS compliant
● IR reflow only
ON Semiconductor
8 Pages / 0.36 MByte
ON Semiconductor
22 Pages / 2.39 MByte
ON Semiconductor
2 Pages / 0.05 MByte
Fairchild
Trans IGBT Chip N-CH 600V 80A 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(2+Tab) D2PAK T/R
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