| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 290 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 290 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
●Features
●---
● |
● High current capability
● Low Saturation Voltage: VCE(sat)=2.3 V @ IC=40A
● High Input Impedance
● Fast switching: EOFF =8uJ/A
● RoHS compliant
ON Semiconductor
14 Pages / 0.28 MByte
ON Semiconductor
13 Pages / 0.57 MByte
ON Semiconductor
2 Pages / 0.05 MByte
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21 Pages / 0.73 MByte
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1 Pages / 0.15 MByte
Fairchild
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
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