| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 349000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 47 ns |
| Input Power (Max) | 349 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 349000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
●Features
●---
● |
● Maximum Junction Temperature : TJ = 175℃
● Positive Temperaure Co-efficient for easy parallel operating
● High current capability
● Low saturation voltage: VCE(sat) = 1.9V(Typ.) @ IC = 40A
● High input impedance
● Tightened Parameter Distribution
● RoHS compliant
● Qualified to Automotive Requirements of AEC-Q101
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Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
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Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
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