| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 290 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 45 ns |
| Input Power (Max) | 290 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.6 mm |
| Size-Width | 4.7 mm |
| Size-Height | 20.6 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FGH40N60UFDTU is a 600V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inverterized microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lower switching losses during the turn-off instant. However, since it doesn"t include an intrinsic body diode in common with all other types of IGBTs, it is generally packaged together with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.
● Low saturation voltage
● High input impedance
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Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
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Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
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Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
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