| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 555000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 65 ns |
| Input Power (Max) | 555 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 555 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IGBT Trench Field Stop 1.2V 80A 555W Through Hole TO-247-3
Fairchild
10 Pages / 0.36 MByte
Fairchild
13 Pages / 0.57 MByte
Fairchild
Trans IGBT Chip N-CH 1200V 80A 555000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 1200V 80A 3Pin TO-247 T/R
Fairchild
Trans IGBT Chip N-CH 1200V 80A 555000mW 4Pin(4+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 555000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 555000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 555000mW 4Pin(4+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 555000mW 3Pin(3+Tab) TO-247 Rail
Micross
Insulated Gate Bipolar Transistor
Fairchild
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
