TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 378000 mW |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 47 ns |
Input Power (Max) | 378 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 378 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.6 mm |
Size-Width | 4.7 mm |
Size-Height | 20.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT Field Stop 600V 120A 378W Through Hole TO-247-3
ON Semiconductor
9 Pages / 0.4 MByte
ON Semiconductor
13 Pages / 0.57 MByte
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Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-247AB Rail
Fairchild
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Rail
Fairchild
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-247AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3Pin(3+Tab) TO-247AB Tube
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