| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 298000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 76 ns |
| Input Power (Max) | 298 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 298000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
●Features
●---
● |
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 60 A
● High Input Impedance
● Fast Switching
● RoHS Compliant
● Qualified to Automotive Requirements of AEC-Q101
ON Semiconductor
6 Pages / 1.7 MByte
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Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-247AB Rail
Fairchild
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Rail
Fairchild
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW 3Pin(3+Tab) TO-247AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW Automotive 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 298000mW 3Pin(3+Tab) TO-247AB Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3Pin(3+Tab) TO-247AB Tube
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