| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 319 ns |
| Input Power (Max) | 231 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
IGBT Trench Field Stop 650V 80A 231W Through Hole TO-247-3
ON Semiconductor
18 Pages / 3.05 MByte
ON Semiconductor
40 A, 650 V Field Stop Trench IGBT Chip Transistor
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