| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Power Dissipation | 391000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 71 ns |
| Input Power (Max) | 391 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 391000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT Trench Field Stop 1200V 80A 391W Through Hole TO-264-3
ON Semiconductor
11 Pages / 1.11 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 391000mW Tube
Fairchild
IGBT Transistors 1200V 40A Field Stop Trench IGBT
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