| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 60.0 A |
| Case/Package | TO-264-3 |
| Power Rating | 180 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Rise Time | 320 ns |
| Breakdown Voltage (Collector to Emitter) | 1000 V |
| Reverse recovery time | 1.2 µs |
| Input Power (Max) | 180 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 20 mm |
| Size-Width | 5 mm |
| Size-Height | 26 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FGL60N100BNTD is a 1000V NPT Trench IGBT with high speed switching. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.
● Low saturation voltage
● High input impedance
● High speed switching
● Built-in fast recovery diode
Fairchild
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