Description
●The FM24C04A is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
●Features
●4K bit Ferroelectric Nonvolatile RAM
●• Organized as 512 x 8 bits
●• High Endurance 1012 Read/Writes
●• 45 Year Data Retention
●• NoDelay™ Writes
●• Advanced High-Reliability Ferroelectric Process
●Fast Two-wire Serial Interface
●• Up to 1 MHz maximum bus frequency
●• Direct hardware replacement for EEPROM
●Low Power Operation
●• 5V operation
●• 150 µA Active Current (100 kHz)
●• 10 µA Standby Current
●Industry Standard Configuration
●• Industrial Temperature -40°C to +85°C
●• 8-pin SOIC (-S)
●• “Green” 8-pin SOIC (-G)
