FM24C16B-GTR Datasheet PDF - Cypress Semiconductor

Functional Description

●The FM24C16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

●Features

●■16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8

●❐High-endurance 100 trillion (1014) read/writes

●❐151-year data retention (See the Data Retention and Endurancetable)

●❐NoDelay™ writes

●❐Advanced high-reliability ferroelectric process

●■Fast 2-wire Serial interface (I2C)

●❐Up to 1-MHz frequency

●❐Direct hardware replacement for serial (I2C) EEPROM

●❐Supports legacy timings for 100 kHz and 400 kHz

●■Low power consumption

●❐100 A active current at 100 kHz

●❐4 A (typ) standby current

●■Voltage operation: VDD= 4.5 V to 5.5 V

●■Industrial temperature: –40 C to +85 C

●■8-pin small outline integrated circuit (SOIC) package

●■Restriction of hazardous substances (RoHS) compliant