Description
●The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A
●ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a
●RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and
●system level reliability problems caused by Serial Flash and other nonvolatile memories.
●Features
●256K bit Ferroelectric Nonvolatile RAM
●Organized as 32,768 x 8 bits
●High Endurance 100 Trillion (1014) Read/Writes
●10 Year Data Retention
●NoDelay™ Writes
●Advanced High-Reliability Ferroelectric Process
●Very Fast Serial Peripheral Interface - SPI
●Up to 40 MHz Frequency
●Direct Hardware Replacement for Serial Flash
●SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
●Write Protection Scheme
●Hardware Protection
●Software Protection
●Device ID
●Device ID reads out Manufacturer ID & Part ID
●Low Voltage, Low Power
●Low Voltage Operation 2.0V – 3.6V
●90 A Standby Current (typ.)
●5 A Sleep Mode Current (typ.)
●Industry Standard Configurations
●Industrial Temperature -40 C to +85 C
●8-pin “Green”/RoHS SOIC Package
●8-pin “Green”/RoHS TDFN Package
