TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 150 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 1.00 A |
Case/Package | SOT-23-3 |
Power Rating | 0.5 W |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 1A |
hFE Min | 300 @250mA, 10V |
Input Power (Max) | 500 mW |
DC Current Gain (hFE) | 300 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this NPN FMMT493ATA GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
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