| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -400 V |
| Current Rating | -150 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 0.5 W |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 0.15A |
| hFE Min | 100 @50mA, 10V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Compared to other transistors, the PNP FMMT558TA general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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