TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -1.00 A |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 1A |
hFE Min | 250 @500mA, 10V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 300 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ |
Jump-start your electronic circuit design with this versatile PNP FMMT723TA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 806 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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