| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | PDIP-4 |
| Number of Channels | 1 Channel |
| Forward Voltage | 1.2 V |
| Power Dissipation | 200 mW |
| Rise Time | 4 µs |
| Isolation Voltage | 5000 Vrms |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 50 mA |
| Fall Time | 3 µs |
| Fall Time (Max) | 18 µs |
| Fall Time (Max) | 18 µs |
| Operating Temperature (Max) | 110 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Box |
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package..
●Features
●---
● |
● AC Input Response (FOD814)
● Current Transfer Ratio in Selected Groups:
● FOD814: 20-300%
● FOD814A: 50-150%
● FOD817: 50-600%
● FOD817A: 80-160%
● FOD817B: 130-260%
● FOD817C: 200-400%
● FOD817D: 300-600%
● Minimum BVCEO of 70 V Guaranteed
● Safety and Regulatory Approvals
● UL1577, 5,000 VACRMS for 1 Minute
● DIN EN/IEC60747-5-5
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