TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Case/Package | DIP-4 |
Rise/Fall Time | 4µs, 3µs |
Input Voltage (DC) | 1.20 V |
Output Voltage | 70.0 V |
Number of Circuits | 1 Circuit |
Number of Channels | 1 Channel |
Number of Positions | 4 Position |
Forward Voltage | 1.2 V |
Input Current | 20.0 mA |
Power Dissipation | 200 mW |
Rise Time | 18 µs |
Isolation Voltage | 5000 Vrms |
Breakdown Voltage (Collector to Emitter) | 70 V |
Forward Current | 50 mA |
Output Voltage (Max) | 70 V |
Input Current (Min) | 50 mA |
Reverse Breakdown Voltage | 6 V |
Maximum Forward Voltage (Max) | 1.4 V |
Forward Current (Max) | 50 mA |
Fall Time | 18 µs |
Fall Time (Max) | 18 µs |
Fall Time (Max) | 18 µs |
Operating Temperature (Max) | 110 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 200 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Box |
Size-Length | 5.1 mm |
Size-Width | 7 mm |
Size-Height | 4 mm |
Operating Temperature | -55℃ ~ 110℃ |
The FOD817B is a 1-channel 4-pin Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for power supply regulators, digital input and microprocessor input.
● Minimum BVCEO of 70V guaranteed
● 850V Maximum working insulation voltage
● 8000V High allowable overvoltage
Fairchild
12 Pages / 0.44 MByte
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