| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | DIP-4 |
| Rise/Fall Time | 100µs, 20µs |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Forward Voltage | 1.2 V |
| Input Current | 50 mA |
| Power Dissipation | 150 mW |
| Rise Time | 300 µs |
| Isolation Voltage | 5000 Vrms |
| Forward Current | 50 mA |
| Output Voltage (Max) | 300 V |
| Input Current (Min) | 50 mA |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 50 mA |
| Fall Time | 100 µs |
| Fall Time (Max) | 100 µs |
| Fall Time (Max) | 300 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -30 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -30℃ ~ 100℃ |
The FOD852 consists of gallium arsenide infrared emitting diode driving a silicon photodarlington output (with integral base-emitter resistor) in a 4-pin dual in-line package.
●Features
●---
● |
● High Current Transfer Ratio: 1000% Minimum
● Safety and Regulatory Approvals
● UL1577, 5,000 VACRMS for 1 Minute
● DIN EN/IEC60747-5-5
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